A 15 W silicon RF-MOS power transistor for broadcast applications and industrial applications in the HF and VHF band. Designed primarily for wideband large-signal output to 400MHz.
Table 1. Production test information
Mode of operation | F (MHz) | VDD(V) | PL(W) | Gp(dB) | ηD(%) |
CW | 150 | 28 | 27 | 21 | 78 |
u Common source configuration
u Typical CW performance @ Freq=150MHz,VDD= 28Vdc , IDQ=100mA
Average output power = 25 W
Power gain = 21 dB
Efficiency = 78 %
u Excellent thermal stability
u Excellent ruggedness
u High power gain
u High efficiency
u 10:1 VSWR capability
u Easy power control
Industrial, scientific and medical applications
Broadcast transmitter applications
Table 2.Pinning
Pin | Description | Simplified outline | Graphic symbol |
1 | Drain |
| 
|
3 | Gate | ||
2、4、5 | Source（Flange） |
Table 3.Limiting values
Symbol | Rating | Values | Unit |
VDSS | drain-source voltage | 90 | V |
VGS | gate-source voltage | ±30 | V |
ID | drain current | 5 | A |
Tstg | storage temperature | -65 to +150 | ℃ |
Tj | junction temperature | 200 | ℃ |
Table 4.Thermal characteristics
Symbol | Parameter Typ. Unit | |
Rth(j-c) | thermal resistance from junction to case 2.6 ℃/W |
5. Characteristics
Table 5. DC characteristics
Tj = 25℃ unless otherwise specified.
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
V(BR)DSS | drain-source breakdown voltage | VGS = 0 V; ID = 1 mA | 75 | - | - | V |
VGS(th) | gate-source threshold voltage | VDS = 10 V; ID =50 mA | 1.0 | 2.7 | 5.0 | V |
IDSS | drain leakage current | VGS = 0 V; VDS =28 V | - | - | 10 | uA |
IGSS | gate leakage current | VGS = ±30 V; VDS = 0 V | - | - | ±1 | uA |
gfs | forward transconductance | VDS = 10 V; ID = 3 A | 0.8 | 1.0 | - | S |
RDS(on) | drain-source on-state resistance | VGS = 10 V; ID = 3A | - | - | 1.1 | Ω |
Crss | feedback capacitance | VGS = 0 V; VDS = 28 V; f = 1 MHz | - | 4 | - | pF |
Ciss | input capacitance | VGS = 0 V; VDS =28V; f = 1 MHz | - | 76 | - | pF |
Coss | output capacitance | VGS = 0 V; VDS = 28 V; f = 1 MHz | - | 36 | - | pF |
Table 6. RF characteristics
Mode of operation: CW; f = 150 MHz; RF performance at VDD = 28 V; IDQ = 100 mA;
Tcase = 25℃;unless otherwise specified; in a class-AB production test circuit.
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
Gp | power gain | PL = 150 W VDS = 28 V IDQ=100mA f = 150 MHz | - | 21 | - | dB |
ηD | drain efficiency | - | 78 | - | % | |
VSWR | Load Mismatch Tolerance | 10:1 | - | - | % |
The DSV136N is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDD = 28V; IDQ= 100 mA; PL = 150 W; f = 150MHz.
All capacitors should be soldered vertically.
Component | Description | Value | Remarks |
C1 | multilayer ceramic chip capacitor | 39 pF | |
C2, C8 | multilayer ceramic chip capacitor | 680 pF | |
C3,C10 | multilayer ceramic chip capacitor | 1nF | |
C4 | multilayer ceramic chip capacitor | 100pF | |
C5 | multilayer ceramic chip capacitor | 10uF | |
C6 | multilayer ceramic chip capacitor | 7.5pF | |
C7 | multilayer ceramic chip capacitor | 24pF | |
C9 | multilayer ceramic chip capacitor | 18 pF | |
C11 | multilayer ceramic chip capacitor | 100nF | |
C12 | multilayer ceramic chip capacitor | 10uF | Electrolytic capacitor |
L1 | Chip inductor | 68nH | |
L2 | 6 turns enameled copper wire | D = 0.5 mm; length = 105 mm | |
L3 | 2 turns enameled copper wire | D = 0.5 mm; length = 10 mm | |
R1 | chip resistor | 150Ohm | |
Z1 | Strip line | (L x W) 6.5mm×2.2mm | |
Z2 | Strip line | (L x W) 9.4mm×2.2mm | |
Z3 | Strip line | (L x W) 13.5mm×2.2mm | |
Z4 | Strip line | (L x W) 6.1mm×1.9mm | |
Printed-Circuit Board (PCB): | Rogers 4350B; er = 0.030” F/m; height = 1mm; Cu (top/bottom metallization); | ||
Fig 2. Power Gain and PAE versus Output Power @F=150MHz CW,VDD=28V,IDQ=100mA
Fig 3. Power Gain versus Output Power
9. Package outline
English