N-Channel Enhancement-Mode MOSFET
Typical Broadband EVB Performance (IDQ=50mA, TA = 25℃, CW)
VDD | Freq. | Gain | Pout | ηD | |
[V] | [MHz] | [dB] | [dBm] | [mW] | [%] |
3.7 | 400 | 19.4 | 23.0 | 200 | 65.5 |
440 | 19.5 | 23.2 | 206 | 65.8 | |
480 | 19.7 | 23.1 | 205 | 65.9 | |
520 | 18.9 | 22.9 | 194 | 63.3 | |
Ÿ Capable of Handling 20:1 VSWR @ 6.0 Vdc, 0.3 Watts, CW
Features
Ÿ Characterized for Operation from 136 to 941 MHz
Ÿ Unmatched Input and Output Allowing Broad Frequency Range Utilization
Ÿ Integrated Stability Enhancements
Ÿ Broadband – Full Power Across the Band
Ÿ Exceptional Thermal Performance
Ÿ Extreme Ruggedness
Typical Applications
Ÿ Output Stage VHF Band Handheld Radio
Ÿ Output Stage UHF Band Handheld Radio
Ÿ Output Stage for 700–800 MHz Handheld Radio
Ÿ Driver for 10–1000 MHz Applications
Table1. Maximum Ratings
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | –0.5, +20 | Vdc |
Gate-Source Voltage | VGS | –0.5, +8 | Vdc |
Operating Voltage | VDD | 0, +6 | Vdc |
Storage Temperature Range | Tstg | –65 to +150 | ℃ |
Case Operating Temperature | TC | –40 to +150 | ℃ |
Operating Junction Temperature | TJ | –40 to +150 | ℃ |
Power Dissipation @TC=25℃ | PD | 0.3 | Watts |
Table 2. ESD Protection Characteristic
Test Methodology | Class |
Human Body Model (per JESD22--A114) | 2, passes 2500 V |
Machine Model (per EIA/JESD22--A115) | A, passes 100 V |
Charge Device Model (per JESD22--C101) | IV, passes 2000 V |
Table 3. Electrical Characteristics (TA=25℃ unless otherwise noted)
Characteristic | Symbol | Min | Typ. | Max | Unit |
Off Characteristics
Gate-Source Leakage Current (VGS=5Vdc, VDS=0Vdc) | IGSS | - | - | 500 | nAdc |
Zero Gate Voltage Drain Leakage Current (VDS=16Vdc, VGS=0Vdc) | IDSS | - | - | 100 | nAdc |
Zero Gate Voltage Drain Leakage Current (VDS=3.7Vdc, VGS=0Vdc) | IDSS | - | - | 100 | nAdc |
On Characteristics
Gate Threshold Voltage (VDS=3.7Vdc, ID=1mA) | VGS(th) | 1.6 | 1.8 | 2.0 | Vdc |
Gate Quiescent Voltage (VDD=3.7Vdc, ID=50mA Measured in Functional Test) | VGS(Q) | 2.3 | 2.6 | 2.9 | Vdc |
Drain-Source On-Voltage (VGS=5Vdc, ID=100mA) | VDS(ON) | - | 0.28 | - | Vdc |
Dynamic Characteristics
Reverse Transfer Capacitance (VDG=3.7V, Level=30mVac@1MHz) | Crss | - | 0.25 | - | pF |
Output Capacitance (VDS=3.7V, Level=30mVac@1MHz) | Coss | - | 1.8 | - | pF |
Input Capacitance (VGS=5V, Level=30mVac@1MHz) | Ciss | - | 8.0 | - | pF |
Typical Performances (In DuSemi Narrowband Test DEMO, 50 Ohm system)
Frequency=440MHz, VDD=3.7Vdc, IDQ=50mA, Pin=4dBm, TA=25℃
Output Power | Pout | - | 155 | - | mW |
Power Gain | GPS | - | 18 | - | dB |
Drain Efficiency
| ηD | - | 57 | - | % |
Broad Band Evaluation Circuit (@VDD = 3.7V, f = 440 MHz)
Test Circuit Component Layout
Table 4. Test Circuit Component Designations and Value
Part | Description | Part Number | Manufacturer |
R3 | 470Ohm | — | — |
R4 | 6.8KOhm | — | — |
L1, L2 | 4.7nH | — | — |
L3 | 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire | — | — |
C3,C15, | 100pF Chip Capacitors | GQM21P5C1H101JB01 | Murata |
C4 | 18pF Chip Capacitors | GRM1885C1H201JA01 | Murata |
C12, C9 | 1000pF Chip Capacitors | GRM1885C1H102JA01 | Murata |
C10, C14,C7 | 10uF,25VChip Capacitors | — | — |
C5 | 24pF Chip Capacitors | — | Murata |
R1,R2,C1,C2,C8,C6 | NC | — | — |
U1 | LM1117 | ||
PCB | FR-4 ,1.6mm, Ɛr4.5 | — | — |
Typical Characteristics
1. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin
2. Output Power versus Gate-Source Voltage @440MHz
3. Power Gain and Drain Efficiency versus Output Power@440MHz
4. Power Gain, Drain Efficiency and Output Power versus Input Power
Package (encapsulation)
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