IQ调制器

C-band TFLN 20/30/40 GHz IQ modulator device.

Description
modulator device, which was developed in-house and showcased unparalleled performance. This device features thermal-optic bias control interface and is manufactured using advanced coupling and micro-electronic processes, and realizes high opto-electric conversion efficiency on TFLN. Our products provide superior characteristics on half-wave voltage, stability, and device size, significantly enhancing critical performance in digital optical communications and telecommunication networks.

 


Product Description
C-band TFLN 20/30/40 GHz IQ modulator device.

 

 

Features
Bandwidth up-to 40 GHz          
Low half-wave voltage 3.5 V        
Low insertion loss ≤ 8 dB

 

 

Package and Pins (Unit: mm)

 

 

PIN

Symbol

Description

PIN

Symbol

Description

RF1

P1

RF Input “I”

7

DC7

Parent MZM bias2

RF2

P2

RF Input “Q”

8

DC8

N/A

1

DC1

N/A

9

DC9

P MZM MPD anode

2

DC2

I1(Child MZM I) bias

10

DC10

P MZM MPD cathode

3

DC3

I2(Child MZM I) bias

11

DC11

Q MZM MPD anode

4

DC4

Q1(Child MZM Q) bias

12

DC12

Q MZM MPD cathode

5

DC5

Q2(Child MZM Q) bias

13

DC13

I MZM MPD anode

6

DC6

Parent MZM bias1

14

DC14

I MZM MPD cathode

Notes:

1. Both input and output are PM fibers, FC/APC connectors.2. RF adaptor type is SSMP (i.e. SMPM or GPPO).

 

 

S21 Measurement (20GHz Typical)

 

 

Ordering Code : HC-X1C8PPBC61

 

Optional Model

Description

Optional Code

X1

RF 3dB Bandwidth

or 3 or 4

 

性能参数

Category

Parameters

Symbol

Unit

Performance

Optical Features

Operating Wavelength

λ

nm

~1550

Optical Extinction Ratio (@ DC)

ER

dB

≥ 20

Optical Return Loss

ORL

dB

≤ -27

Optical Insertion Loss (*)

IL

dB

≤ 8

Electrical Features

3 dB Bandwidth(from 2 GHz)

S21

GHz

X1: 2

X1: 3

X1: 4

Min: 18,Typ: 20

Min: 26,Typ: 30

Min: 36,Typ: 40

Child RF Vπ(@ 50 kHz)

Vπ-C

V

3 ~ 3.5

Heater Resistance

Rh

Ohm

4000 ± 10%

Heater Pπ(@ DC)

Pπ

mw

≤ 40

RF Return Loss(10 MHz to 40 GHz)

S11

dB

≤ -10

Work Condition

Operating Temperature

TO

°C

-10~60

  • Lower insertion loss is available for customization.

 

 

Absolute Maximum Ratings

Working over maximum ratings could significantly reduce device reliability and cause irreversible damage.

 

Parameters

Symbol

Min.

Max.

Unit

RF Input Power (*)

Sin

-

23

dBm

RF Swing Voltage (*)

Vpp

-

8.93

V

RF RMS Voltage (*)

Vrms

-

3.16

V

Heater Bias Voltage

Uheater

-

15

V

Storage Temperature

Ts

-40

85

Relative Humidity(no condensation)

RH

5

90

%

  • Higher RF input power is customizable.