100G 光模块 CFP2 LR4

100 Gb/s CFP2 LR4 Transceiver,CP2-27B4-10D ,1.25G~100G,支持定制

HC 100G CFP2 LR4 optical Transceiver integrates receiver and transmitter path on one module. In the transmit side, four lanes of serial data streams are recovered, retimed, and passed to four laser drivers. The laser drivers control four EMLs (Electric-absorption Modulated Lasers) with center wavelength of 1296 nm, 1300nm, 1305nm and 1309 nm. The optical signals are multiplexed to a single –mode fiber through an industry standard LC connector. In the receive side, the four lanes of optical data streams are optically de-multiplexed by the integrated optical de-multiplexer. Each data stream is recovered by a PIN photo-detector and transimpedance amplifier, retimed. This module features a hot-pluggable electrical interface, low power consumption and MDIO management interface.

 

The module provides an aggregated signaling rate from 103.125 Gbps to 111.81 Gbps. It is compliant with IEEE 802.3-2012 Clause 88 100GBASE-LR4 and ITU-T G.959.1-2012-02, and OIF2010.404.08 CEI-28G-VSR electrical specifications. The MDIO management interface complies with IEEE 802.3-2012 Clause 45 standard. The transceiver complies with CFP MSA CFP2 Hardware Specification Rev. 1.0, CFP MSA Management Interface Specification Rev. 2.2, and OIF CEI-28G-VSR standards. A block diagram is shown in Figure 1.

 

Figure 1. CFP2 LR4 Optical Transceiver functional block diagram

 

 

Transmitter

The transmitter path converts four lanes of serial NRZ electrical data from line rate of 25.78 Gbps to 27.95 Gbps to a standard compliant optical signal. Each signal path accepts a 100 Ω differential 100 mV peak-to-peak to 900 mV peak-to-peak 25 Gbps electrical signal on TDxn and TDxp pins. Inside the module, each differential pair of electric signals is input to a CDR (clock-data recovery) chip. The recovered and retimed signals are then passed to a laser driver which transforms the small swing voltage to an output modulation that drives a EML laser. The laser drivers control four EMLs with center wavelengths of 1296 nm, 1300 nm, 1305 nm and 1309 nm. The optical signals from the four lasers are multiplexed together optically. The combined optical signals are coupled to single-mode optical fiber through an industry standard LC optical connector.

 

 

Receiver

The receiver takes incoming combined four lanes optical data from line rate of 25.78 Gbps to 27.95 Gbps through an industry standard LC optical connector. The four incoming wavelengths are separated by an optical de-multiplexer into four separated channels. Each output is coupled to a PIN photo-detector. The electrical currents from each PIN photo-detector are converted to a voltage with a high-gain transimpedance amplifier. The electrical output is recovered and retimed by the CDR chip. The four lanes of reshaped electrical signals are output to RDxp and RDxn pins.

 

Pin Function Definitions

 

性能参数

Absolute Maximum Ratings

Parameter

Symbol

Min.

Typ.

Max.

Unit

Note

Storage Temperature

Ts

-40

-

85

ºC

 

Relative Humidity

RH

5

-

95

%

 

Power Supply Voltage

VCC

-0.3

-

4

V

 

Signal Input Voltage

 

Vcc-0.3

-

Vcc+0.3

V

 

Receive Input Optical Power (Damage threshold)

Pdmg

 

 

5.0

dBm

 

 

 

Low Speed Electrical Characteristics

 

Parameter

Symbol

Min

Typ.

Max

Unit

Notes

 

Supply currents and voltages

 

Voltage

Vcc

3.2

3.3

3.4

V

With Respect to GND

 

Supply current

Icc

 

 

2.8

A

 

 

 

Power dissipation

Pwr

 

 

9.0

W

 

 

 

Power dissipation (low power mode)

Plp

 

 

2.0

W

 

 

 

Low speed control and sense signals, 3.3 V LVCMOS

 

 

Outputs low voltage

VOL

 

 

0.2

V

IOH=100 μA

 

Output high voltage

VOH

Vcc-0.2

 

 

V

IOH=-100 μA

 

Input low voltage

VIL 

-0.3

 

0.8

V

 

 

Input high voltage

VIH 

2

 

Vcc3+ 0.3

V

 

 

Input leakage current

IIN 

-10

 

10

μA

 

 

Low speed control and sense signals, 1.2 V LVCMOS

 

Outputs low voltage

VOL 

-0.3

 

0.2

V

 

 

Output high voltage

VOH 

1.0

 

1.5

V

 

 

Output low current

IOL 

4

 

 

mA

 

 

Output high current

IOH 

 

 

-4

mA

 

 

Input low voltage

VIL 

-0.3

 

0.36

V

 

 

Input high voltage

VIH 

0.84

 

1.5

V

 

 

Input leakage current

IIN 

-100

 

100

μA

 

 

Input capacitance

C

 

 

10

pF

 

 

MDC clock rate

 

0.1

 

4

MHz

 

 

 

High Speed Electrical Specifications

 

Parameter

Symbol

Min

Max

Unit

Notes

Transmitter electrical input from host

Differential voltage pk-pk

 

 

900

mV

 

Common mode noise (rms)

 

 

17.5

mV

 

Differential termination mismatch

 

 

10

%

 

Transition time

 

10

 

ps

20/80%

Common mode voltage

 

-0.3

2.8

V

 

Eye width

EW15

0.46

 

UI

At10-15probability

Eye height

EH15

100

 

mV

At 10-15 probability

Receiver electrical output to host

Differential voltage pk-pk

 

 

900

mV

 

Common mode noise (rms)

 

 

17.5

mV

 

Differential termination mismatch

 

 

10

%

 

Transition time

 

9.5

 

ps

20/80%

Vertical eye closure

VEC

 

6.5

dB

 

Eye width

EW15

0.57

 

UI

At 10-15 probability

Eye height

EH15

240

mV

 

At 10-15 probability

 

 

Optical Transmitter Characteristics

 

Parameter

Symbol

Min

Typ.

Max

Unit

Notes

Signaling rate, each lane

 

 

25.78125

 

GBd

 

Lane wavelengthrange

 

1294.53

1295.56

1296.59

nm

 

 

1299.02

1300.05

1301.09

nm

 

 

1303.54

1304.58

1305.63

nm

 

 

1308.09

1309.14

1310.19

nm

 

Rate tolerance

 

-100

 

100

ppm

From nominal rate

Side-mode suppression ratio

SMSR

30

 

 

dB

 

Total launch power

 

 

 

10.5

dBm

 

Average launch power, each lane

Pavg

-4.3

 

4.5

dBm

 

Extinction Ratio

ER

4

9

 

dB

 

Optical modulation amplitude,

each lane (OMA)

OMA

-1.3

 

4.5

dBm

 

Difference in launch power

between any two lanes (OMA)

 

 

 

5

dB

 

Transmitter and Dispersion

Penalty, each lane

TDP

 

 

2.2

dB

 

OMA minus TDP, each lane

OMA-TDP

-2.3

 

 

dBm

 

Average launch power of OFF

transmitter, each lane

 

 

 

-30

dBm

 

Relative Intensity Noise

RIN20O

MA

 

 

-130

dB/Hz

 

Transmitter reflectance

 

 

 

-12

dB

 

Transmitter eye mask {X1, X2,

X3, Y1, Y2, Y3}

 

{0.25, 0.4, 0.45, 0.25, 0.28, 0.4}

 

 

 

 

Optical Receiver Characteristics

 

Parameter

Symbol

Min

Typ.

Max

Unit

Notes

Signaling rate, each lane

 

 

25.78125

 

GBd

 

Rate tolerance

 

-100

 

100

ppm

From nominal rate

Average receive power, each lane

Pavg

-10.6

 

4.5

dBm

 

Receive power, each lane (OMA)

 

 

 

4.5

dBm

 

Difference in launch power

between any two lanes (OMA)

 

 

 

5.5

dB

 

Receiver Sensitivity (OMA),

each lane

Rsen

 

 

-8.6

dBm

1

Stressed Receiver Sensitivity

(OMA), each lane

SRS

 

 

-6.8

dBm

 

Stressed receiver sensitivity test conditions

Vertical eye closure penalty, each lane

VECP

 

1.8

 

dB

 

Stressed sys J2 jitter, each lane

J2

 

0.3

 

UI

2

Stressed sys J9 jitter, each lane

J9

 

0.47

 

UI

2

Receiver reflectance

 

 

 

-26

dB

 

LOS Assert

Plos_on

-30

 

 

dBm

 

LOS Deassert

Plos_off

 

 

-12

dBm

 

LOS Hysteresis

 

0.5

 

4

dB

 

1. Receiver sensitivity (OMA), each lane, is informative.

2. Vertical eye closure penalty, stressed eye J2 Jitter, and stressed eye J9 Jitter are test conditions for measuring stressed receiver sensitivity. They are not characteristics of the receiver.